HIGH RELIABILITY
miniSD
The usage of Single Level Cell flash combined with the built-in Error Correction, Bad Block Management and Wear Leveling algorithms extends the endurance of the memory to 2,000,0000 Write/Erase cycles per block for 128MB, 256MB and 512MB. For 1GB and 2GB SD card the endurance is 300,000 Write/Erase cycles per block since these capacities use the latest flash components to provide better performance, cost optimization and long term support.